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Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures

机译:锰调制掺杂的InAs / InGaAs / InAlAs量子阱结构中塞曼效应的磁光研究

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摘要

We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum wells (QW). Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry, both lines split into two circularly polarized components. While temperature and magnetic field dependence of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds by two orders of magnitude the value of the giant Zeeman splitting estimated for the average Mn density in QW obtained by the secondary ion mass spectroscopy.
机译:我们报告了在锰调制掺杂的InAs / InGaAs / InAlAs量子阱(QW)中塞曼效应的磁光致发光(PL)研究。已经观察到两条PL线,其对应于具有自由和结合在Mn上的空穴的光电子的辐射复合。在法拉第几何中施加磁场的情况下,两条线均分裂为两个圆极化分量。尽管布里渊函数很好地描述了分裂的温度和磁场依赖性,这为与自旋极化锰离子的交换相互作用提供了证据,但分裂的值超过了据估计的巨大塞曼分裂值的两个数量级。通过二次离子质谱法获得的QW中的平均Mn密度。

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